Employment of Silicon Nitride Films Prepared by DC Reactive Sputtering Technique for Ion Release Applications

In this work, silicon nitride (Si3N4) thin films were deposited on metallic substrates (aluminium and titanium sheets) by the DC reactive sputtering technique using two different targets (n-type p-type Si wafers) as well Ar:N2 gas mixing ratios (50:50 70:30). The electrical conductivity of titanium) was measured before after deposition both surfaces substrates. results obtained from work showed that films, in general, reduced substrates, prepared n-type a 50:50 ratio substrate 30%. This reduction release ions coated metal is attributed to dielectric properties films. result very important applicable. represents first attempt Iraq study such effects may represent good starting point for advanced studies biomedical engineering.